型号/品牌/封装
品类/描述
库存
价格(含税)
资料
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品类: 晶体管描述: 氮化镓HEMT脉冲功率晶体管3.1 - 3.5 GHz频段，峰值120W ， 300US脉冲， 10 ％占空比 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10% Duty37821-9￥3807.122010-24￥3772.511825-49￥3755.206750-99￥3737.9016100-149￥3720.5965150-249￥3703.2914250-499￥3685.9863≥500￥3668.6812 -
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品类: 晶体管描述: 氮化镓对SiC耗尽型晶体管技术内部匹配 GaN on SiC Depletion-Mode Transistor Technology Internally Matched34271-9￥7887.891010-24￥7816.182925-49￥7780.328950-99￥7744.4748100-149￥7708.6208150-249￥7672.7667250-499￥7636.9127≥500￥7601.0586 -
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品类: 晶体管描述: 氮化镓对SiC耗尽型晶体管技术内部匹配 GaN on SiC Depletion-Mode Transistor Technology Internally Matched51961-9￥7887.891010-24￥7816.182925-49￥7780.328950-99￥7744.4748100-149￥7708.6208150-249￥7672.7667250-499￥7636.9127≥500￥7601.0586 -
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品类: RF模块、IC及配件描述: DIODE57951-9￥109.204010-99￥104.4560100-249￥103.6014250-499￥102.9366500-999￥101.89211000-2499￥101.41732500-4999￥100.7526≥5000￥100.1828 -
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品类: 运算放大器描述: General Purpose Amplifier CATV Amplifier 1000MHz Single 4Pin(3+Tab) SOT-89 Bulk82225-49￥19.176350-199￥18.3568200-499￥17.8979500-999￥17.78321000-2499￥17.66842500-4999￥17.53735000-7499￥17.4554≥7500￥17.3734 -
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品类: 晶体管描述: 氮化镓HEMT脉冲功率晶体管2.7 - 3.1 GHz的峰值30W ， 500US脉冲，占空比为10％ GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 30W Peak, 500us Pulse, 10% Duty Cycle95451-9￥2407.053010-24￥2385.170725-49￥2374.229650-99￥2363.2884100-149￥2352.3473150-249￥2341.4061250-499￥2330.4650≥500￥2319.5238 -
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品类: 放大器IC与RF模块描述: 宽带UHF / VHF功率模块20 - 512兆赫， 10W Broadband UHF/VHF Power Module 20 - 512 MHz, 10W89801-9￥10673.982010-24￥10576.945825-49￥10528.427750-99￥10479.9096100-149￥10431.3915150-249￥10382.8734250-499￥10334.3553≥500￥10285.8372 -
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品类: 放大器IC与RF模块描述: RF Amp Module Single Power Amp 5.9GHz 9V 28Pin SMD Bulk14881-9￥680.329210-49￥656.458050-99￥653.4741100-149￥650.4902150-249￥645.7160250-499￥641.5385500-999￥637.3610≥1000￥632.5868
